摘要：In order to avoid bonding invalidation induced by electrostatic force, a low-stress anodic bonding method was proposed based on the pull-in effect. A trapezoid silicon beam and Pyrex glass deposited with electrode in recess were fabricated by wet etching, and pull-in voltage of the structure were theoretically analyzed and validated by experimental study. Aluminium and chromium were deposited on the Pyrex glass as electrode; chromium, as an intermediate layer, can prevent the anodic bonding. Because chromium oxides formed during bonding process are conductive, in that case, the electrostatic field between the Pyrex and silicon wafers will vanish. The transportation of oxygen ions, e. G. 02- , from Pyrex to the silicon was not able to occur. Aluminium, as the primary electrical layer, maintains the good electrical properties. The voltages during the anodic bonding process were step up. In the first step, the silicon and Pyrex glass were bonded at 200 V to make sure that the two structures contacted together. In the second step, the bonding voltage was raised to the normal level of 400 V to enhance the bonding strength. Therefore, a reliable bonding structure can be attained, but the deformation of the trapezoid silicon beam was just a quarter of that under invariable bonding voltage of 400 V. Meanwhile, the effect of electrostatic force and residual stress introduced during anodic bonding process can be decreased.%基于阳极键合过程中的静电吸合效应,提出了一种可避免静电黏附失效的低应力阳极键合技术.采用湿法腐蚀技术制作了梯形截面的硅梁结构和对应的Pyrex玻璃基底,理论分析了该结构的静电吸合电压并进行了实验验证.采用铝/铬作为玻璃基底的电极层,铬作为中间层,从而阻止阳极键合发生.由于在键合过程中形成的铬氧化物为导体,所以硅与玻璃之间的静电场消失,从而阻止了玻璃中的O2-等负离子向硅移动,避免了静电黏附失效；采用Al作为主要电极层,可以保证电极的电学特性.采用了逐步升压法,首先在200 V低电压条件下进行预键合,使结合面具有一定的连接强度,然后再提升键合电压至400V进行强化键合,在充分保证键合强度的前提下,静电力作用下的结构变形仅为400V恒压模式下的1/4,减小了静电力对键合结构产生的影响,有效改善了键合过程中产生的残余应力.