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【24h】Nonsegmented PSpice Circuit Model of GaN HEMT With Simulation Convergence Consideration

机译考虑仿真收敛性的GaN HEMT非分段PSpice电路模型

【摘要】To solve the simulation convergence problem of enhancement mode gallium nitride high-electron mobility transistor (GaN HEMT) models, this paper proposes a nonsegmented model for GaN HEMT, which uses nonsegmented, smooth continuous equations to describe the static and dynamic characteristics of GaN HEMT. Furthermore, the static characteristic of GaN HEMT obtained by the nonsegmented model is verified by comparing the simulation curves with the static curves provided in datasheet; and the dynamic characteristic obtained by the nonsegmented model is verified by comparing the simulation result with the experimental result based on double pulse test platform. Moreover, to prove the good performance on simulation convergence of the proposed nonsegmented GaN HEMT model, the full-bridge dc–ac inverter with four GaN HEMTs has been employed as an example; the simulation result shows the good convergence of the inverter compared to the conventional segmented GaN HEMT model, which make it possible and flexible to research the power converters with GaN HEMTs by simulation way.

【摘要机译】为解决增强型氮化镓高电子迁移率晶体管(GaN HEMT)模型的仿真收敛问题,本文提出了GaN HEMT的非分段模型,该模型使用非分段的光滑连续方程式描述GaN HEMT的静态和动态特性。此外,通过将仿真曲线与数据表中提供的静态曲线进行比较,验证了通过非分段模型获得的GaN HEMT的静态特性;通过将仿真结果与基于双脉冲测试平台的实验结果进行比较,验证了非分段模型获得的动态特性。此外,为了证明所提出的非分段GaN HEMT模型在仿真收敛性方面的良好性能,以具有四个GaN HEMT的全桥DC-AC逆变器为例。仿真结果表明,与传统分段式GaN HEMT模型相比,逆变器具有良好的收敛性,从而可以通过仿真方法灵活地研究具有GaN HEMT的功率转换器。

【作者】Hong Li;Xingran Zhao;Wenzhe Su;Kai Sun;Xiaojie You;Trillion Q. Zheng;

【作者单位】School of Electrical Engineering, Beijing Jiaotong University, Beijing, China; School of Electrical Engineering, Beijing Jiaotong University, Beijing, China; School of Electrical Engineering, Beijing Jiaotong University, Beijing, China; Department of Electrical Engineering, Tsinghua University, Beijing, China; School of Electrical Engineering, Beijing Jiaotong University, Beijing, China; School of Electrical Engineering, Beijing Jiaotong University, Beijing, China;

【年(卷),期】2017(64),11

【年度】2017

【页码】8992-9000

【总页数】9

【原文格式】PDF

【正文语种】eng

【中图分类】;

【关键词】Mathematical model;Gallium nitride;HEMTs;Integrated circuit modeling;Capacitance;Numerical models;Logic gates;

机译 数学模型氮化镓HEMT集成电路建模电容数值模型逻辑门;
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