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【24h】Mask Modeling in the Low k_1 and Ultrahigh NA Regime: Phase and Polarization Effects

机译低k_1和超高NA条件下的掩模建模:相位和偏振效应

【摘要】This paper reviews state of the art mask modeling for optical lithography. Rigorous electromagnetic field (EMF) simulation of light diffraction from optical masks is compared to the traditional assumption of an infinitely thin mask, the so called Kirchhoff approach. Rigorous EMF simulation will be employed to analyze mask polarization phenomena which become important in the ultrahigh NA regime. Several important lithographic phenomena, which can be explained only with rigorous EMF simulation, are discussed. This includes the printability of small assist features, intensity imbalancing for alternating PSM, and process window deformations. The paper concludes with a discussion on material issues and algorithmic extensions which will be necessary for an accurate modeling of future mask technology.

【摘要机译】本文回顾了用于光学光刻的最新掩模建模。将光学掩模发出的光衍射的严格电磁场(EMF)模拟与无限薄掩模的传统假设(即所谓的Kirchhoff方法)进行了比较。严格的EMF仿真将用于分析掩模极化现象,这在超高NA方案中变得非常重要。讨论了一些重要的光刻现象,这些现象只能通过严格的EMF仿真来解释。这包括小辅助功能部件的可打印性,交替PSM的强度不平衡以及过程窗口变形。本文以关于材料问题和算法扩展的讨论作为结束,这对于将来的掩模技术的精确建模将是必需的。

【作者】reas Erdmann;

【作者单位】Fraunhofer Institute of Integrated Systems Device Technology (FhG-IISB), Schottkystrasse 10, 91058 Erlangen, Germany;

【年(卷),期】2005(),

【年度】2005

【页码】P.69-81

【总页数】13

【原文格式】PDF

【正文语种】eng

【中图分类】TB85;TN305.7;

【关键词】lithography simulation;mask topography;mask polarization;

机译 光刻模拟掩模形貌掩模极化;
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