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【24h】Influence of pellicle mounting to predicted mask flatness

机译薄膜安装对预计的掩模平坦度的影响

【摘要】The shrinkage of semiconductor devices creates demand for micronization in the photolithographic process. As a result, problems are arising in photolithography in the semiconductor manufacturing process. Focus latitude in photolithography becomes smaller as micronization advances and therefore the flatness of the mask can no longer be ignored. In the previous workl, we clarified what the specification of mask flatness should be from the standpoint of its warpage in vacuum chucking of an expo-sure tool. A two-dimensional approach was applied for the prediction of mask surface after chucking. The approach was simple analytical calculation distinguishing between x-direction and y-direction. Warpage of mask surface after chucking had two modes depending on the directions. One was leverage caused by interaction of mask surface and chucking stage. Another one was warpage along chucking stage surface. The prediction of mask flatness showed good agreement with the actual surface of chucked mask. In this study, influence of pellicle mounting to the prediction was investigated furthermore. Difference of flatness about 0.1-0.2 um at the pellicle mounting process was observed. This value of the flatness change is not negligible in order to control mask flatness for hp65 nm technology node. However, the difference between the chucked mask surface with the pellicle and that without the pellicle decreased. In order to understand the cause of the change of flatness by pellicle mounting reduced by the vacuum chucking, a simulation analysis by a FEM was performed. The simulation showed that the vacuum chucking reduces the difference of flatness to permissible value. The vacuum chucking of an exposure tool negates the warpage caused by the pellicle mounting. Since the power of the leverage caused by chuck stage is overwhelmingly large as compared with the warpage power of the pellicle, this phenomenon is observed. As a conclusion, the prediction of mask flatness with the vacuum chucking has no influence of the pellicle mounting.

【摘要机译】半导体器件的收缩在光刻工艺中产生了对微粉化的需求。结果,在半导体制造过程中的光刻中出现问题。随着微粉化的发展,光刻中的聚焦纬度变得更小,因此不再不能忽略掩模的平坦度。在先前的工作中,我们从曝光工具真空吸盘翘曲的角度出发,阐明了掩模平面度的规格应该是什么。二维方法被应用于卡盘后掩膜表面的预测。该方法是区分x方向和y方向的简单分析计算。吸附后的面罩表面翘曲根据方向具有两种模式。一种是由于面罩表面和卡盘阶段的相互作用而引起的杠杆作用。另一个是沿卡盘台面翘曲。掩膜平整度的预测与被吸附的掩膜的实际表面显示出良好的一致性。在这项研究中,进一步研究了薄膜的安装对预测的影响。在薄膜安装过程中观察到平坦度的差异约为0.1-0.2um。为了控制hp65 nm技术节点的掩模平坦度,该平坦度变化的值不可忽略。然而,具有防护膜的被夹持面罩表面与没有防护膜的被夹持面罩之间的差异减小。为了理解由于真空吸盘而减少的薄膜安装导致的平坦度变化的原因,进行了基于FEM的仿真分析。仿真表明,真空吸盘将平面度的差异减小到允许值。真空工具的真空吸盘消除了由薄膜组件安装引起的翘曲。由于与卡盘的翘曲力相比,由卡盘级引起的杠杆作用力非常大,因此可以观察到这种现象。综上所述,通过真空吸盘对掩模平面度的预测不会影响薄膜的安装。

【作者】Masamitsu Itoh;Soichi Inoue;Tsuneyuki Hagiwara;Naoto Kondo;

【作者单位】Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp. 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8583, Japan;

【年(卷),期】2005(),

【年度】2005

【页码】P.13-19

【总页数】7

【原文格式】PDF

【正文语种】eng

【中图分类】TB85;TN305.7;

【关键词】mask flatness;prediction;pellicle;chucking;

机译 面罩平面度;预测;防护膜;卡紧;
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