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【24h】Exploring the fundamental limit of CD control: a measurement of shot noise induced CDU in e-beam lithography

机译探索CD控制的基本极限:在电子束光刻中测量散粒噪声引起的CDU

【摘要】We have used our Quadra lithography system to evaluate the shot-noise-induced critical dimension uniformity (CDU). We found that at the isofocal dose, the shot-noise-induced CDU is directly proportional to the edge blur, and hence the rate of CD changes with dose. This emphasizes the importance of minimizing beam blur of the system. We used a phenomenological model to analyze our experimental data. The model included the counting statistics of the incident electrons and that of the electron induced chemistry. With the proper parameters, this model matches the experimental observations well. It also predicts the limit of the improvements and suggests guides for the optimization of the lithographic process.

【摘要机译】我们已经使用我们的Quadra光刻系统来评估散粒噪声引起的临界尺寸均匀性(CDU)。我们发现,在等焦剂量下,散粒噪声诱导的CDU与边缘模糊成正比,因此CD的速率随剂量而变化。这强调了最小化系统光束模糊的重要性。我们使用现象学模型来分析我们的实验数据。该模型包括入射电子和电子感应化学的计数统计。通过适当的参数,该模型与实验观察结果非常吻合。它还预测了改进的局限性,并为光刻工艺的优化提供了指导。

【作者】Ming L. Yu;Allan Sagle;Benny Buller;

【作者单位】Etec Systems, An Applied Materials Company, 26460 Corporate Avenue, Hayward, California 94545, USA;

【年(卷),期】2005(),

【年度】2005

【页码】P.105-114

【总页数】10

【原文格式】PDF

【正文语种】eng

【中图分类】TB85;TN305.7;

【关键词】shot noise;CD uniformity;resist processing;acid diffusion;beam blur;

机译 散粒噪声; CD均匀性;抗蚀处理;酸扩散;光束模糊;
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